Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes-Reference-Cited by-同舟云学术

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Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Published:2008-11 Issue:23 Volume:310 Page:5217-5222
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dupuis Russell D.,Ryou Jae-Hyun,Shen Shyh-Chiang,Yoder P. Douglas,Zhang Yun,Kim Hee Jin,Choi Suk,Lochner Zachary

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. Semiconductor ultraviolet detectors

2. Semiconductor near-ultraviolet photoelectronics

3. Improved detection of the invisible

4. GaN-based modulation doped FETs and UV detectors

5. Ultraviolet photodetectors based upon III-N materials;Dupuis,2003

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1. A semiconductor Sc₂S₃ monolayer with ultrahigh carrier mobility for UV blocking filter application;Physical Chemistry Chemical Physics;2023

2. Breakdown characteristics of deep-ultraviolet Al_0.6Ga_0.4N p-i-n avalanche photodiodes;Journal of Applied Physics;2022-03-14

3. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum;Ultrawide Bandgap Semiconductors;2021

4. Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes;The European Physical Journal Applied Physics;2020-10

5. 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K;Applied Physics Letters;2020-05-26

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