Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area-Reference-Cited by-同舟云学术

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Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

Published:2008-12-15 Issue:1 Volume:42 Page:015108
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Liu W B,Zhao D G,Sun X,Zhang S,Jiang D S,Wang H,Zhang S M,Liu Z S,Zhu J J,Wang Y T,Duan L H,Yang H

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=1/a=015108/pdf

Reference20 articles.

1. Semiconductor ultraviolet detectors

2. Growth and applications of Group III-nitrides

3. Wide-bandgap semiconductor ultraviolet photodetectors

4. III–Nitride UV Devices

5. III-nitride avalanche photodiodes

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1. Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes;Applied Physics Letters;2023-09-18

2. Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector;Optical Materials Express;2021-05-06

3. Gallium Nitride –Based Photodiode: A review;Materials Today: Proceedings;2021

4. Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry–Perot filter;Optics Express;2019-12-11

5. Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area;Gallium Nitride Materials and Devices XIV;2019-03-01

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