Chromium aluminum oxide films for ArF line high transmittance attenuated phase shifting mask application
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference13 articles.
1. Improving resolution in photolithography with a phase-shifting mask
2. L. F. Thompson, C. G. Willson, and M. J. Bowden,Introduction to Microlithography, pp. 78–81, American Chemical Society, Washington, DC (1994).
3. Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node
4. Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3–ZrO2–SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes;Thin Solid Films;2006-02
2. Composite thin films of (ZrO[sub 2])[sub x]-(Al[sub 2]O[sub 3])[sub 1−x] for high transmittance attenuated phase shifting mask in ArF optical lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. 157-nm attenuated phase-shift mask materials with irradiation stability;SPIE Proceedings;2003-12-15
4. High transmittance attenuated phase shifting mask of chromium aluminum oxynitride;21st Annual BACUS Symposium on Photomask Technology;2002-03-11
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