ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3–ZrO2–SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes-Reference-Cited by-同舟云学术

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ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3–ZrO2–SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes

Published:2006-02 Issue:2 Volume:496 Page:247-252
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lai Fu-Der,Hua Jui-Ming,Huang C.Y.,Ko Fu-Hsiang,Wang L.A.,Lin C.H.,Chang C.M.,Lee S.,Chern Gia-Wei

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Improvement of Phase-Shifter Edge Line Mask Method

2. Pattern Transfer Characteristics of Transparent Phase Shifting Mask

3. Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks

4. Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I

5. Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-functional ECR plasma sputtering system for preparing amorphous carbon and Al–O–Si films;Surface and Coatings Technology;2011-12

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