Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node-Reference-Cited by-同舟云学术

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Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Published:1998-12-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Petersen John S.,McCallum Martin,Kachwala Nishrin,Socha Robert J.,Chen J. Fung,Laidig Thomas L.,Smith Bruce W.,Gordon Ronald L.,Mack Chris A.

Publisher

SPIE

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3–ZrO2–SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes;Thin Solid Films;2006-02

3. Composite thin films of (ZrO[sub 2])[sub x]-(Al[sub 2]O[sub 3])[sub 1−x] for high transmittance attenuated phase shifting mask in ArF optical lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

4. Programmable lithography engine (ProLE) grid-type supercomputer and its applications;SPIE Proceedings;2003-06-25

5. Resist requirements in the era of resolution enhancement techniques;Advances in Resist Technology and Processing XX;2003-06-11

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