Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process

Author:

Tarutani Shinji,Hideaki Tsubaki,Kamimura Sou

Publisher

SPIE

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Cluster sampling and scalable Bayesian optimization with constraints for negative tone development resist model calibration;Optics Express;2024-04-16

2. 19-nm critical dimension process using mask shift double exposure in ArF immersion;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-02-01

3. Randomness of Polymer Microstructure in the Resist Film as Shot Noise;Journal of Photopolymer Science and Technology;2021-06-11

4. Fundamental study of polymer dynamic behavior in resist processing;Advances in Patterning Materials and Processes XXXVIII;2021-02-22

5. Novel EUV Resist Materials for 7 nm Node and Beyond;Journal of Photopolymer Science and Technology;2018-06-25

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