Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method
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SPIE
Reference10 articles.
1. Light-Emitting Diodes
2. An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas
3. Temperature-dependence of the internal efficiency droop in GaN-based diodes
4. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
5. Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes
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