Base and collector leakage currents of AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357502
Reference8 articles.
1. Space-charge region recombination in heterojunction bipolar transistors
2. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
3. Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
4. Recombination at semiconductor surfaces and interfaces
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