Frequency increase of an InP‐based HBT using improved layout design and base‐collector undercut process-Reference-Cited by-同舟云学术

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Frequency increase of an InP‐based HBT using improved layout design and base‐collector undercut process

Published:2020-05-05 Issue:10 Volume:62 Page:3107-3111
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Lee Jongwon¹,Lee Kiwon²^ORCID

Affiliation:

1. National NanoFab Center Daejeon South Korea

2. Department of Electronic EngineeringWonkwang University Iksan‐si Jeonbuk South Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32421

Reference7 articles.

1. UrteagaM HackerJ GriffithZ YoungA PiersonR RowellP SeoM andM.J.W.Rodwell. A 130 nm InP HBT integrated circuit technology for THz electronics ” 2016 Electron Device Meeting December2016.

2. 0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits

3. A physics-based, analytical heterojunction bipolar transistor model, including thermal and high-current effects

4. New collector undercut technique using a SiN sidewall for low base contact resistance in InP/InGaAs SHBTs

5. Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs

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