InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability

Author:

Liu Xiang,Yuan Jiann S.,Liou Juin J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Pavlidis Dimitris. HBT vs. PHEMT vs. MESFET: What’s best and why. GaAs Mantech Conference, April 19–22, 1999.

2. High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9W output power at 10GHz;Riepe;IEEE Microwave Guided Wave Lett,1996

3. A 2watt 8–14GHz HBT power MMIC with 20dB gain and >40% power-added efficiency;Ali;IEEE Trans Microwave Theory Tech,1994

4. A 1.8W 6-18GHz HBT MMIC power amplifier with 10dB gain and 37% peak power-added efficiency;Salib;IEEE Microwave Guided Wave Lett,1993

5. Komiak JJ, Yang LW. 5watt high efficiency wideband 7 to 11GHz HBT MMIC power amplifier. IEEE 1995 Microwave Millimeter-Wave Monolithic Circuits Symp Dig, pp. 17–20, May 1995.

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