GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

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GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors

Published:2012-08-23 Issue: Volume: Page:455-474
ISSN:
Container-title:Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
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Author:

Ren F.,Douglas E. A.,Pearton Stephen J.

Publisher

Springer New York

Link

http://link.springer.com/content/pdf/10.1007/978-1-4614-4337-7_14

Reference45 articles.

1. W.J. Roesch, Microelectron. Reliab. 46, 1218 (2006)

2. T.A. Henderson, in Reliability of Compound Semiconductors Workshop, 2006 (unpublished)

3. J.A. del Alamo, A.A. Villanueva, IEDM Tech. Dig. 1019–1022 (2004)

4. G. Meneghesso, E. Zanoni, Microelectron. Reliab. 42, 685 (2002)

5. Y.K. Kukai, S. Sugitani, T. Enoki, Y. Yamane, IEEE Trans. Device Mater. Reliab. 8, 289 (2008)

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