Cl2reactive ion etching mechanisms studied byinsitudetermination of ion energy and ion flux
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347495
Reference41 articles.
1. Ion‐surface interactions in plasma etching
2. Surface modification in plasma-assisted etching of silicon
3. Surface modification in plasma-assisted etching of silicon
4. Argon‐ion assisted etching of silicon by molecular chlorine
5. Argon‐ion assisted etching of silicon by molecular chlorine
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