Molecular dynamics simulations of Cl+ etching on a Si(100) surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3361038
Reference45 articles.
1. Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments
2. Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)
3. Plasma-etching processes for ULSI semiconductor circuits
4. Time-resolved measurements of Cl2 density in high-density plasmas and application
5. Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy
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