Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)-Reference-Cited by-同舟云学术

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Published:2018-11 Issue:11 Volume:8 Page:115116
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Amalraj Frank Wilson¹,Dhasiyan Arun Kumar¹,Lu Yi¹,Shimizu Naohiro¹,Oda Osamu¹,Ishikawa Kenji¹^ORCID,Kondo Hiroki¹,Sekine Makoto¹,Ikarashi Nobuyuki²,Hori Masaru¹

Affiliation:

1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050819

Reference20 articles.

1. GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

2. GaN: Processing, defects, and devices

3. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

4. Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

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