Composition dependence of the hole mobility in GaSbxAs1−x
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2912534
Reference8 articles.
1. Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
2. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
3. Heavily carbon-doped GaAsSb grown on InP for HBT applications
4. Valence-band anticrossing in mismatched III-V semiconductor alloys
5. Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition
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