Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1-Reference-Cited by-同舟云学术

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Author:

Yamazaki Takanori¹,Shigematsu Kei²,Hirose Yasushi¹²^ORCID,Nakao Shoichiro²,Harayama Isao³,Sekiba Daiichiro³⁴,Hasegawa Tetsuya¹²

Affiliation:

1. Department of Chemistry, School of Science, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan

2. Kanagawa Academy of Science and Technology (KAST), Kawasaki, Kanagawa 213-0012, Japan

3. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan

4. University of Tsukuba Tandem Accelerator Complex (UTTAC), 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577, Japan

Funder

Tokyo Ohka Foundation for the Promotion of Science and Technology

Core Research for Evolutional Science and Technology (CREST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference24 articles.

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