Graded band‐gap ohmic contacts ton‐ andp‐type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348458
Reference14 articles.
1. Unified defect model and beyond
2. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
3. Thermally stable ohmic contacts ton‐type GaAs. II. MoGeInW contact metal
4. Pt/Ti/p‐InGaAsP nonalloyed ohmic contact formed by rapid thermal processing
5. A non‐alloyed ohmic contact formation onn‐type GaAs
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2. Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing;SPIE Proceedings;2007-11-29
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