A non‐alloyed ohmic contact formation onn‐type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345391
Reference13 articles.
1. Specific contact resistance of ohmic contacts to gallium arsenide
2. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
3. Ohmic contacts to GaAs
4. Specific resistivity of a metal-n GaAs OHMIC contact with an intermediate N+ layer
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors;Journal of Applied Physics;1993-12-15
2. Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using delta -doped surface layers;Semiconductor Science and Technology;1993-10-01
3. Recent developments in ohmic contacts for III–V compound semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09
4. Graded band‐gap ohmic contacts ton‐ andp‐type InP;Journal of Applied Physics;1991-04
5. Electrical and structural properties of W-In based ohmic contacts to GaAs;Solid-State Electronics;1990-12
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