Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using delta -doped surface layers
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=10/a=010/pdf
Reference16 articles.
1. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
2. Metal-semiconductor contacts for GaAs bulk effect devices
3. Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs
4. An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors
5. Comparison of Au/Ni/Ge, Au/Pd/Ge, and Au/Pt/Ge Ohmic contacts ton‐type GaAs
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