Lateral gettering of iron by cavities induced by helium implantation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1315328
Reference11 articles.
1. Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
2. Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering
3. Lateral Gettering of Fe on Bulk and Silicon‐on‐Insulator Wafers
4. Kinetics of impurity gettering on buried defects created by MeV argon implantation
5. Interaction of copper with cavities in silicon
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1. Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures;Journal of Applied Physics;2018-10-28
2. The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing;Journal of Applied Crystallography;2017-03-22
3. Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing;Solid State Phenomena;2009-10
4. Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects;Chemical Reviews;2009-08-11
5. Sink-effect of nanocavities: Thermodynamic and kinetic approach;Applied Physics Letters;2007-07-30
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