Lateral Gettering of Fe on Bulk and Silicon‐on‐Insulator Wafers-Reference-Cited by-同舟云学术

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Lateral Gettering of Fe on Bulk and Silicon‐on‐Insulator Wafers

Published:1999-05-01 Issue:5 Volume:146 Page:1925-1928
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Beaman Kevin L.¹,Kononchuk Oleg¹,Koveshnikov Sergei¹,Osburn Carl M.¹,Rozgonyi George A.¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391867/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gettering in silicon-on-insulator wafers with polysilicon layer;Materials Science and Engineering: B;2009-03

2. Gettering of iron in silicon by boron implantation;Journal of Materials Science: Materials in Electronics;2008-02-23

3. Present Status and Prospect of Si Wafers for Ultra Large Scale Integration;Japanese Journal of Applied Physics;2004-07-07

4. Lateral gettering of iron by cavities induced by helium implantation in silicon;Journal of Applied Physics;2000-11

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