A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications
Author:
Affiliation:
1. Department of Mechanical Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, China
2. Center for Advanced Structural Materials (CASM), Shenzhen Research Institute of City University of Hong Kong, Shenzhen, China
Funder
City University of Hong Kong
Research Grants Council, University Grants Committee
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5052718
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