Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices-Reference-Cited by-同舟云学术

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Published:2024-06-20 Issue:26 Volume:16 Page:33789-33795
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bartmann Maximilian G.¹,Glassner Sebastian¹,Sistani Masiar¹^ORCID,Rurali Riccardo²^ORCID,Palummo Maurizia³,Cartoixà Xavier⁴^ORCID,Smoliner Jürgen¹,Lugstein Alois¹^ORCID

Affiliation:

1. Institute for Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria

2. Institut de Ciència de Materials de Barcelona, ICMAB−CSIC, Campus UAB, 08193 Bellaterra, Spain

3. Dipartimento di Fisica and INFN, Università di Roma ”Tor Vergata”, 00133 Roma, Italy

4. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Barcelona, Spain

Funder

European Commission

Ministerio de Ciencia e Innovaci??n

Austrian Science Fund

Generalitat de Catalunya

The authors acknowledge TU Wien Bibliothek for financial support through its Open Access Funding Programm

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c05477

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