Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4752108
Reference23 articles.
1. Solid-State Lighting
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1. Two-dimensional confocal photoluminescence spectroscopy of nonpolar a-plane InGaN/GaN multiple quantum wells;Ceramics International;2023-03
2. Strain and built-in fields in wurtzite GaN/Al In1−xN quantum wells and quantum dots;Superlattices and Microstructures;2018-08
3. Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity;Physical Review B;2017-10-20
4. Non-polar InxGa1−xN/GaN quantum dots: impact of dot size and shape anisotropies on excitonic and biexcitonic properties;Journal of Physics D: Applied Physics;2016-12-02
5. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field;Materials Science in Semiconductor Processing;2016-11
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