Strain and built-in fields in wurtzite GaN/Al In1−xN quantum wells and quantum dots
Author:
Funder
Daegu Catholic University
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
2. Model of photoluminescence temperature dependence in GaN/AlN quantum dot structures
3. Excitonic complexes in GaN/(Al,Ga)N quantum dots
4. Quantum Dot Heterostructure;Bimberg,1999
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1. Performance improvement of green QW LEDs, for the different doping in the barriers, using InAlN interlayer and strain compensated AlGaN interlayer at the InGaN/GaN interface;Optical Materials;2021-03
2. The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells;Journal of Nanoelectronics and Optoelectronics;2021-01-01
3. InGaN based tunable green light-emitting diodes using InAlN interlayer and strain compensated AlGaN interlayer for better device performance;Optics & Laser Technology;2020-04
4. Stacking defects in GaP nanowires: Electronic structure and optical properties;Journal of Applied Physics;2019-08-28
5. Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2019-04
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