Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs-Reference-Cited by-同舟云学术

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Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs

Published:2007-05 Issue:3 Volume:1 Page:125-127
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Kim Kwang-Choong,Schmidt Mathew C.,Sato Hitoshi,Wu Feng,Fellows Natalie,Saito Makoto,Fujito Kenji,Speck James S.,Nakamura Shuji,DenBaars Steven P.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Hole Compensation Mechanism of P-Type GaN Films

4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

5. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

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