Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis
Author:
Affiliation:
1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Funder
National Basic Research Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939593
Reference31 articles.
1. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
2. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
3. Droop in III-nitrides: Comparison of bulk and injection contributions
4. Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
5. An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
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