Effects of dopants and excess silicon on the oxidation of TaSi2/polycrystalline silicon structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337701
Reference18 articles.
1. Oxidation of tantalum disilicide on polycrystalline silicon
2. Oxidation mechanisms in TiSi2films on single silicon substrates
3. Characterization of Thin Film Molybdenum Silicide Oxide
4. Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2films on 〈Si〉
5. Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
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1. Field emission cooling of thermoelectric semiconductor PbTe;Applied Physics Letters;2011-06-13
2. Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation;Journal of Applied Physics;1999-10
3. Silicides and ohmic contacts;Materials Chemistry and Physics;1998-02
4. Kinetics and mechanism of plasma oxidation of tantalum silicides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-01
5. Silicides;Characterization in Silicon Processing;1993
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