Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332821
Reference28 articles.
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4. Characterization of Thin Film Molybdenum Silicide Oxide
5. Thermal oxidation of hafnium silicide films on silicon
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3. Parallel angle resolved XPS investigations on 12in. wafers for the study of W and WSix oxidation in air;Microelectronic Engineering;2008-09
4. Effect of annealing ambient on WSi[sub x](x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. Sidewall oxidation behavior of dichlorosilane-based W-polycide gate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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