Low‐threshold and wide‐bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98906
Reference8 articles.
1. Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser
2. InGaAsP laser with semi‐insulating current confining layers
3. Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
4. Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers
5. Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers
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1. 6-GHz operation of a flip-chip mounted 1.3-μm laser diode on an AIGaAs/GaAs HBT laser driver circuit;Digest of Conference on Optical Fiber Communication;1992
2. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
3. Fiber optic sensor for substrate temperature monitoring;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-07
4. High-speed, self-aligned, 1300 nm buried ridge laser suitable for integration;IEE Proceedings J Optoelectronics;1990
5. Fiber optic Fabry-Perot temperature sensors;25th Joint Propulsion Conference;1989-07-12
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