Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860832?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strategies of Nanoscale Semiconductor Lasers;Nanotechnology for Electronic Materials and Devices;2007
2. On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy;physica status solidi (c);2006-06
3. Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer;Journal of Applied Physics;2002-09
4. Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE;Journal of Lightwave Technology;1997-03
5. Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP;Journal of Electronic Materials;1992-02
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