Author:
Panda Debashis,Huang Chun-Yang,Tseng Tseung-Yuen
Subject
Physics and Astronomy (miscellaneous)
Reference22 articles.
1. Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films
2. Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
3. Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
4. Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
5. M. Kund, G. Beitel, C.U. Pinnow, T. Röhr, J. Schumann, R. Symanczyk, K.D. Ufert, and G. Müller, in IEEE International Electron Devices Meeting - Technical Digest, Washington, DC, 5-7 December, 2005, p. 773.
Cited by
89 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献