Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3231872
Reference14 articles.
1. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
2. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
3. Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
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