Author:
Wafee Seema,Leu Ching-Chich,Chen Yu-Wen,Liu Bernard Haochih
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference100 articles.
1. Demonstration of ultra-fast switching in nanometallic resistive switching memory devices;Yang;J. Nanosci.,2016
2. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020
3. Low-power resistive random access memory by confining the formation of conducting filaments;Huang;AIP Adv.,2016
4. Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage;Chen;ECS J. Solid State Sci. Technol.,2018
5. Effects of stress on resistive switching property of the NiO RRAM device;Ma;Microelectron. Eng.,2015
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