Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing-Reference-Cited by-同舟云学术

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Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing

Published:2011-03-21 Issue:12 Volume:98 Page:122109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Won-Kyung,Lee Seunghun,Cho Yong Chan,Koinuma Hideomi,Jeong Se-Young,Shin Jong Moon,Cho Chae Ryong,Bae Jong-Seong,Kim Tae-Young,Park Sungkyun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3567635

Reference19 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

3. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

4. Effects of Oxygen Partial Pressure on the Electrical Characteristics of InGaZnO Thin Film Transistors

5. Solution-processed InGaZnO-based thin film transistors for printed electronics applications

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1. Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors;Applied Physics Letters;2022-08-15

2. Study of SiO 2 Etching Processing with CH 4 /SF 6 Plasmas;physica status solidi (a);2020-05-27

3. Quantitative hydrogen analysis through time of flight-elastic recoil detection analysis using medium energy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07

4. Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs;IEEE Transactions on Electron Devices;2018-07

5. Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material;Scientific Reports;2017-04-25

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