Study of SiO 2 Etching Processing with CH 4 /SF 6 Plasmas-Reference-Cited by-同舟云学术

Study of SiO 2 Etching Processing with CH 4 /SF 6 Plasmas

Published:2020-05-27 Issue:15 Volume:217 Page:2000223
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Man Xu¹^ORCID,Bao Ni¹,Hao Yongqin¹,Feng Yuan¹,Ma Xiaohui¹

Affiliation:

1. State Key Laboratory of High Power Semiconductor LaserChangchun University of Science and Technology Changchun 130000 China

Funder

National Natural Science Foundation of China

Jilin Scientific and Technological Development Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000223

Reference23 articles.

1. Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

2. Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

3. Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing

4. Ultrahigh-aspect-ratio SiO[sub 2] deeply etched periodic structures with smooth surfaces for photonics applications

5. Anisotropic Etching of SiO2Film and Quartz Plate Employing Anhydrous HF

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