A Morphology Control Method of Submicron SiO<sub>2</sub> Arrays in CHF<sub>3</sub>/Ar Inductively Coupled Plasma Etching-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A Morphology Control Method of Submicron SiO₂ Arrays in CHF₃/Ar Inductively Coupled Plasma Etching

Published:2023-07-31 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
language:
Short-container-title:

Author:

Zhang Zhibo¹,Dong Litong¹,Wang Lu¹,Ouyang Mingzhao²,Liu Mengnan¹,Wang Zuobin¹

Affiliation:

1. Changchun University of Science and Technology,JR3CN&CNM,Changchun,China

2. Changchun University of Science and Technology,School of Optoelectronic Engineering,Changchun,China

Funder

Natural Science Foundation of Chongqing

Education Department of Jilin Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10305274/10305299/10305361.pdf?arnumber=10305361

Reference28 articles.

1. Side Wall Roughness Reduction in Deep Silicon Oxide Etching Using C2F6 Based ECR-RIBE

2. Study of SiO 2 Etching Processing with CH 4 /SF 6 Plasmas

3. Plasma etching: Yesterday, today, and tomorrow

4. Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

5. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP