Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Morphology Control Method of Submicron SiO2 Arrays in CHF3/Ar Inductively Coupled Plasma Etching;2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO);2023-07-31
2. Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-20
3. Patterning of Si3N4 Layer in Pulse-Biased Capacitively-Coupled Plasmas for Multi-Level Hard Mask Structures;Journal of Nanoscience and Nanotechnology;2016-11-01
4. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks;Journal of Nanoscience and Nanotechnology;2016-05-01
5. Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures;Electronic Materials Letters;2015-01
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