Growth of high quality epitaxial Ge films on (100)Si by sputter deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93239
Reference9 articles.
1. Heteroepitaxy of vacuum‐evaporated Ge films on single‐crystal Si
2. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
3. Growth of high‐quality epitaxial GaAs films by sputter deposition
4. Growth of single crystal GaAs and metastable (GaSb)1−xGexAlloys by sputter deposition: Ion-surface interaction effects
5. Diffusion enhancement due to low‐energy ion bombardment during sputter etching and deposition
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1. Impact of Sn incorporation on sputter epitaxy of GeSn;Applied Physics Express;2023-09-01
2. Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering;Materials Science in Semiconductor Processing;2017-11
3. Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering;Japanese Journal of Applied Physics;2017-02-09
4. Sputtered germanium/silicon devices for photonics applications;SPIE Proceedings;2015-08-26
5. Sputter epitaxy of heavily doped p+/n+ Ge film on Si(100) by cosputtering with Al/Sb for solar cell application;Japanese Journal of Applied Physics;2015-07-08
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