Broad luminescent band in Zn‐doped AlxGa1−xAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332961
Reference9 articles.
1. Photoluminescence measurements of Zn‐doped Ga1−xAlxAs grown by metalorganic chemical vapor deposition
2. Photoluminescence of GaxAl1-xAs Crystals Grown by Liquid Phase Epitaxy
3. Photoluminescence measurements in Ge‐dopedp‐type Ga0.60Al0.40As
4. Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
5. Photoluminescence of Ge‐doped AlxGa1−xAs grown by liquid phase epitaxy
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1. Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy;Journal of Crystal Growth;1999-03
2. Low temperature photoluminescence properties of p- and n-type AlxGa1-xAs with x > 0.42;Czechoslovak Journal of Physics;1999
3. Photoluminescence Visible at 77 K from Indirect-Gap AlxGa1-xAs Grown by Organometallic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;1998-10-01
4. Stoichiometry-dependent deep levels in undoped p-type Al0.38Ga0.62As grown by liquid phase epitaxy;Journal of Electronic Materials;1998-08
5. Evidence for photoluminescence band in p-type Al0.67Ga0.33As related to nonequilibrium DX− centres;Journal of Luminescence;1997-06
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