Photoluminescence measurements in Ge‐dopedp‐type Ga0.60Al0.40As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328465
Reference21 articles.
1. Germanium‐Doped Gallium Arsenide
2. Luminescence due to Ge Acceptors in GaAs
3. Acceptor behaviour of germanium in gallium arsenide
4. The growth and properties of LPE GaAs
5. Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs
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3. Low temperature photoluminescence properties of p- and n-type AlxGa1-xAs with x > 0.42;Czechoslovak Journal of Physics;1999
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