Acceptor behaviour of germanium in gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference11 articles.
1. Properties of Elemental and Compound Semiconductors;Whelan,1960
2. Behavior of Germanium in Gallium Arsenide
3. Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium
4. Germanium-Doped Gallium Arsenide Tunnel Diodes
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1. Electrical properties of the solid solutions p-type GaAs[sub 1−x]Sb[sub x] doped with germanium;Semiconductors;1997-05
2. Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1991-09
3. On the Concentration and Composition Dependence of the Acceptor Energy in AlxGa1−xAs: Ge (x ≤ 0.40);physica status solidi (a);1990-06-16
4. Microinhomogeneities of donor and acceptor distributions in n-type LEC-GaAs from free-carrier infrared absorption;Physica Status Solidi (a);1984-12-16
5. Photoluminescence measurements in Ge‐dopedp‐type Ga0.60Al0.40As;Journal of Applied Physics;1981-01
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