Evidence for photoluminescence band in p-type Al0.67Ga0.33As related to nonequilibrium DX− centres-Reference-Cited by-同舟云学术

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Evidence for photoluminescence band in p-type Al0.67Ga0.33As related to nonequilibrium DX− centres

Published:1997-06 Issue: Volume:72-74 Page:333-335
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Gladkov P.,Z̆dánský K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference5 articles.

1. Photoluminescence spectrum ofp‐type AlxGa1−xAs:Ge

2. Broad luminescent band in Zn‐doped AlxGa1−xAs grown by metalorganic chemical vapor deposition

3. Multicomponent structure in the temperature‐dependent persistent photoconductivity due to differentDXcenters in AlxGa1−xAs:Si

4. Deep donor levels (DXcenters) in III‐V semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quenching of Luminescence Emission due to a Transient Bonding State of Donor-Acceptor Pairs at High Excitation Levels in GaAlAs Crystals Doped to Compensation;Materials Science Forum;2005-03

2. Optoelectronic switching between luminescence bands in highly doped (Ga,Al) As:Si;SPIE Proceedings;2000-12-15

3. Transient excitation behavior of a donor-acceptor-acceptor Auger molecule in a semiconductor host;Theoretical Chemistry Accounts: Theory, Computation, and Modeling (Theoretica Chimica Acta);2000-07-21

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