Multicomponent structure in the temperature‐dependent persistent photoconductivity due to differentDXcenters in AlxGa1−xAs:Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103898
Reference15 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. A new model of deep donor centres in AlxGa1-xAs
4. DXcenter inGa1−xAlxAs alloys
5. Long‐lifetime photoconductivity effect inn‐type GaAlAs
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1. Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique;Microelectronics Journal;2006-07
2. Electric field effect on the electron emission from Te-DX in AlxGa1−xAs;Materials Science and Engineering: C;2006-03
3. Evidence of threeDXcenters in Al0.28Ga0.72As:Si from Hall experiments;Journal of Applied Physics;2003-06-15
4. Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1?xAs;physica status solidi (b);2001-10
5. Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers;Journal of Crystal Growth;2000-02
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