Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers-Reference-Cited by-同舟云学术

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Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers

Published:2000-02 Issue:2-3 Volume:209 Page:440-444
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kizuki Hirotaka,Kouji Yoshiharu,Hayafuji Norio,Kajikawa Yasutomo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. R.L. Ross, S.P. Svensson, P. Lugli, Pseudomorphic HEMT Technology and Applications NATO ASI Series E, Vol. 309, Kluwer, Dordrecht, 1996.

2. 1997 IEEE MTT-S International Microwave Symposium Digest;Kunii,1997

3. A. Inoue, A. Ohta, T. Nakamoto, S. Kageyama, T. Kitano, K. Sato, IEICE Trans. Electron., 1999, in press.

4. 1999 Emerging Technologies Symposium;Ishikawa,1999

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