Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution-Reference-Cited by-同舟云学术

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Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution

Published:1978-03 Issue:3 Volume:17 Page:515-519
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishii Makoto,Ito Akiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/17/i=3/a=515/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006

2. Broad photoluminescence band in undoped AlxGa1−xAs grown by organometallic vapor phase epitaxy;Journal of Applied Physics;1997-06

3. Evidence for photoluminescence band inp‐type Al0.67Ga0.33As related to nonequilibriumDX−centers;Journal of Applied Physics;1996-09

4. Time‐resolved spectra of the 1.55‐eV band in Ge‐doped AlxGa1−xAs;Journal of Applied Physics;1990-04

5. Photoluminescence of Ge-doped AlxGa1-xAs;Semiconductor Science and Technology;1988-09-01

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