Phosphorus redistribution during nickel silicide formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341898
Reference7 articles.
1. The redistribution of implanted dopants after metal‐silicide formation
2. Platinum silicide ohmic contacts to shallow junctions in silicon
3. Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodes
4. Pile up of implanted phosphorus during palladium silicide formation and the characteristics of Schottky barrier diodes
5. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts;Nano Letters;2012-07-13
2. Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors;Microelectronics Reliability;2011-05
3. Ni-catalyzed growth of silicon wire arrays for a Schottky diode;Applied Physics Letters;2010-07-26
4. Effect of a Mo Interlayer on the Electrical Properties of Ni-Silicided n[sup +]∕p Diode and n[sup +] Poly-Si Gate Electrode;Journal of The Electrochemical Society;2007
5. Threshold voltage control in NiSi-gated MOSFETs through SIIS;IEEE Transactions on Electron Devices;2005-01
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