Ni-catalyzed growth of silicon wire arrays for a Schottky diode-Reference-Cited by-同舟云学术

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Ni-catalyzed growth of silicon wire arrays for a Schottky diode

Published:2010-07-26 Issue:4 Volume:97 Page:042103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jee Sang-Won,Kim Joondong,Jung Jin-Young,Um Han-Don,Moiz Syed Abdul,Yoo Bongyoung,Cho Hyung Koun,Park Yun Chang,Lee Jung-Ho

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3467839

Reference18 articles.

1. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

2. Silicon nanowire solar cells

3. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

4. Recombination Properties of Gold in Silicon

5. Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect

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1. Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches;Beilstein Journal of Nanotechnology;2023-01-20

2. Fundamentals of organic solar cells: A review on mobility issues and measurement methods;Optik;2022-10

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4. Ultrafast hot ion-exchange triggered electrocatalyst modification and interface engineering on silicon photoanodes;Nano Energy;2020-04

5. Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si;Physica B: Condensed Matter;2018-05

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