Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si-Reference-Cited by-同舟云学术

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Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

Published:2018-05 Issue: Volume:537 Page:228-235
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mahala Pramila,Patel Malkeshkumar,Gupta Navneet,Kim Joondong,Lee Byung Ha

Funder

Incheon National University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference54 articles.

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2. Graphene, a promising transparent conductor;Wassei;Mater. Today,2010

3. Transparent conductors as solar energy materials: a panoramic review;Granqvist;Sol. Energy Mater. Sol. Cells,2007

4. Past achievements and future challenges in the development of optically transparent electrodes;Ellmer;Nat. Photon.,2012

5. A transparent electrode based on a metal nanotrough network;Wu;Nat. Nanotechnol.,2013

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