A charge transport study in diamond, surface passivated by high-k dielectric oxides
Author:
Affiliation:
1. Division for Electricity, Department of Engineering Sciences, Box 534, Uppsala University, Uppsala SE-751 21, Sweden
Funder
Vetenskapsrådet (Swedish Research Council)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4901961
Reference24 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique
3. Time-of-Flight Characterization of Single-crystalline CVD Diamond with Different Surface Passivation Layers
4. High-κ gate dielectrics: Current status and materials properties considerations
5. Pulse-doped diamond p-channel metal semiconductor field-effect transistor
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